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Electronics Repair (sci.electronics.repair) Discussion of repairing electronic equipment. Topics include requests for assistance, where to obtain servicing information and parts, techniques for diagnosis and repair, and annecdotes about success, failures and problems. |
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#1
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I'm restoring a mistreated DX7 to working condition.
Re this schematic: http://www.bobdbob.com/~deneb/ftp/dxmemory.png The battery is a lithium coin cell, like a CR2032. D4 on my board has been replaced with a gigantic power rectifier. I'd like to re-replace it with a part more appropriate for the application (or at least that fits through the holes on the circuit board). /IC is an "initial clear" signal that comes from the power supply. From staring at the schematic for a few hours, it looks like during power-on, the RAM is kept powered by the battery, and then when the power has stabilized, Tr1 switches the 5V rail to the RAM (stopping current from the battery via D4). Also, during power-on, it looks like Tr3 prevents the /CE2 line from asserting (there are four RAM IC's, and /CE2 doesn't go anywhere else on the schematic.) I guess this prevents garbage from getting written if /WE wobbles during power-on? So what I'm wondering is, what kind of diode can I replace this with? Do I want to go with a Ge diode to keep the available voltage at a maximum, or doesn't it matter? Is current an issue? I wish I had another DX7 to examine but I don't. I can't find a datasheet for the M5M5118P so I don't know what kind of Vdd it wants. Thanks as always.. (BTW the schematic came from this page: http://www.maths.abdn.ac.uk/~bensond...ml#diagnostics ) |
#2
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On Sat, 4 Apr 2009 18:33:22 -0700 (PDT), "
put finger to keyboard and composed: I'm restoring a mistreated DX7 to working condition. Re this schematic: http://www.bobdbob.com/~deneb/ftp/dxmemory.png The battery is a lithium coin cell, like a CR2032. D4 on my board has been replaced with a gigantic power rectifier. I'd like to re-replace it with a part more appropriate for the application (or at least that fits through the holes on the circuit board). /IC is an "initial clear" signal that comes from the power supply. From staring at the schematic for a few hours, it looks like during power-on, the RAM is kept powered by the battery, and then when the power has stabilized, Tr1 switches the 5V rail to the RAM (stopping current from the battery via D4). Also, during power-on, it looks like Tr3 prevents the /CE2 line from asserting (there are four RAM IC's, and /CE2 doesn't go anywhere else on the schematic.) I guess this prevents garbage from getting written if /WE wobbles during power-on? So what I'm wondering is, what kind of diode can I replace this with? Do I want to go with a Ge diode to keep the available voltage at a maximum, or doesn't it matter? Is current an issue? I wish I had another DX7 to examine but I don't. I can't find a datasheet for the M5M5118P so I don't know what kind of Vdd it wants. http://www.datasheetarchive.com/pdf-...DSAP002745.pdf The operating voltage is 5V +/- 0.5V. "Data can be held with 2V supply voltage". It seems to me that a general purpose silicon diode should suffice. The current draw of each RAM in standby mode is only 15uA. Thanks as always.. (BTW the schematic came from this page: http://www.maths.abdn.ac.uk/~bensond...ml#diagnostics ) - Franc Zabkar -- Please remove one 'i' from my address when replying by email. |
#4
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wrote:
I'm restoring a mistreated DX7 to working condition. Re this schematic: http://www.bobdbob.com/~deneb/ftp/dxmemory.png The battery is a lithium coin cell, like a CR2032. D4 on my board has been replaced with a gigantic power rectifier. I'd like to re-replace it with a part more appropriate for the application (or at least that fits through the holes on the circuit board). /IC is an "initial clear" signal that comes from the power supply. From staring at the schematic for a few hours, it looks like during power-on, the RAM is kept powered by the battery, and then when the power has stabilized, Tr1 switches the 5V rail to the RAM (stopping current from the battery via D4). Also, during power-on, it looks like Tr3 prevents the /CE2 line from asserting (there are four RAM IC's, and /CE2 doesn't go anywhere else on the schematic.) I guess this prevents garbage from getting written if /WE wobbles during power-on? So what I'm wondering is, what kind of diode can I replace this with? Do I want to go with a Ge diode to keep the available voltage at a maximum, or doesn't it matter? Is current an issue? I wish I had another DX7 to examine but I don't. I can't find a datasheet for the M5M5118P so I don't know what kind of Vdd it wants. Thanks as always.. (BTW the schematic came from this page: http://www.maths.abdn.ac.uk/~bensond...ml#diagnostics ) Use a Schottky diode, they have good handling current and low forward voltage. Also, you may want to change the electrolytic cap just after the diode to prevent drainage. normally a high Q cap for this is a good idea. http://webpages.charter.net/jamie_5" |
#5
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On Sun, 05 Apr 2009 13:57:57 +1000, Bob Larter
put finger to keyboard and composed: wrote: I'm restoring a mistreated DX7 to working condition. Re this schematic: http://www.bobdbob.com/~deneb/ftp/dxmemory.png The battery is a lithium coin cell, like a CR2032. D4 on my board has been replaced with a gigantic power rectifier. I'd like to re-replace it with a part more appropriate for the application (or at least that fits through the holes on the circuit board). [...] So what I'm wondering is, what kind of diode can I replace this with? Do I want to go with a Ge diode to keep the available voltage at a maximum, or doesn't it matter? Some random, small Schottky (for the low Vf) diode would probably do the trick. I've seen germanium diodes used in similar circuits, but I wouldn't recommend one with a lithium cell, as it will leak a small current into the cell, which they don't like. I've always thought that Schottky diodes were fine for the OP's stated purpose, but after you raised the point about reverse leakage currents, ISTR that Schottky diodes aren't too good in this regard. - Franc Zabkar -- Please remove one 'i' from my address when replying by email. |
#6
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On Apr 5, 4:42*pm, Franc Zabkar wrote:
On Sun, 05 Apr 2009 13:57:57 +1000, Bob Larter put finger to keyboard and composed: wrote: I'm restoring a mistreated DX7 to working condition. Re this schematic: http://www.bobdbob.com/~deneb/ftp/dxmemory.png The battery is a lithium coin cell, like a CR2032. D4 on my board has been replaced with a gigantic power rectifier. I'd like to re-replace it with a part more appropriate for the application (or at least that fits through the holes on the circuit board). [...] So what I'm wondering is, what kind of diode can I replace this with? Do I want to go with a Ge diode to keep the available voltage at a maximum, or doesn't it matter? Some random, small Schottky (for the low Vf) diode would probably do the trick. I've seen germanium diodes used in similar circuits, but I wouldn't recommend one with a lithium cell, as it will leak a small current into the cell, which they don't like. I've always thought that Schottky diodes were fine for the OP's stated purpose, but after you raised the point about reverse leakage currents, ISTR that Schottky diodes aren't too good in this regard. - Franc Zabkar -- Please remove one 'i' from my address when replying by email. Interesting.. I hadn't considered the reverse current aspect. I was only worried about the voltage drop. Since you got me on the right track I found this: http://www.panasonic.com/industrial/...gnMemoryBU.pdf It gives a rough idea of the maximum allowable reverse current depending on the application. |
#7
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On Mon, 6 Apr 2009 05:45:54 -0700 (PDT), Fox put
finger to keyboard and composed: On Apr 5, 4:42*pm, Franc Zabkar wrote: On Sun, 05 Apr 2009 13:57:57 +1000, Bob Larter put finger to keyboard and composed: wrote: I'm restoring a mistreated DX7 to working condition. Re this schematic: http://www.bobdbob.com/~deneb/ftp/dxmemory.png The battery is a lithium coin cell, like a CR2032. D4 on my board has been replaced with a gigantic power rectifier. I'd like to re-replace it with a part more appropriate for the application (or at least that fits through the holes on the circuit board). [...] So what I'm wondering is, what kind of diode can I replace this with? Do I want to go with a Ge diode to keep the available voltage at a maximum, or doesn't it matter? Some random, small Schottky (for the low Vf) diode would probably do the trick. I've seen germanium diodes used in similar circuits, but I wouldn't recommend one with a lithium cell, as it will leak a small current into the cell, which they don't like. I've always thought that Schottky diodes were fine for the OP's stated purpose, but after you raised the point about reverse leakage currents, ISTR that Schottky diodes aren't too good in this regard. - Franc Zabkar -- Please remove one 'i' from my address when replying by email. Interesting.. I hadn't considered the reverse current aspect. I was only worried about the voltage drop. Since you got me on the right track I found this: http://www.panasonic.com/industrial/...gnMemoryBU.pdf It gives a rough idea of the maximum allowable reverse current depending on the application. The examples in that document cite a reverse current of 4nA for a Schottky diode and 6nA for a silicon diode. But ... A 1A 1N4001 diode has a typical reverse current of 50nA at 25degC: http://www.onsemi.com/pub_link/Collateral/1N4001-D.PDF A 1A 1N5817 Schottky diode has a reverse current of 1mA at 25degC: http://www.onsemi.com/pub_link/Collateral/1N5817-D.PDF The above leakages are measured at the rated reverse voltage, so at 2V (5V - 3V) they would probably be a lot less. Nevertheless the figures still suggest that Schottky diodes have worse leakage characteristics than regular silicon diodes. - Franc Zabkar -- Please remove one 'i' from my address when replying by email. |
#8
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Franc Zabkar wrote:
On Mon, 6 Apr 2009 05:45:54 -0700 (PDT), Fox put finger to keyboard and composed: http://www.panasonic.com/industrial/...gnMemoryBU.pdf [...] It gives a rough idea of the maximum allowable reverse current depending on the application. The examples in that document cite a reverse current of 4nA for a Schottky diode and 6nA for a silicon diode. But ... A 1A 1N4001 diode has a typical reverse current of 50nA at 25degC: http://www.onsemi.com/pub_link/Collateral/1N4001-D.PDF A 1A 1N5817 Schottky diode has a reverse current of 1mA at 25degC: http://www.onsemi.com/pub_link/Collateral/1N5817-D.PDF The above leakages are measured at the rated reverse voltage, so at 2V (5V - 3V) they would probably be a lot less. Nevertheless the figures still suggest that Schottky diodes have worse leakage characteristics than regular silicon diodes. Interesting. I hadn't realised that 1N5817s were as leaky as that. The OP should probably try to find a low reverse-leakage Schottky, or substitute a standard diode & accept that the battery life will be shortened due to the lowered memory voltage. -- W . | ,. w , "Some people are alive only because \|/ \|/ it is illegal to kill them." Perna condita delenda est ---^----^--------------------------------------------------------------- |
#9
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On Apr 8, 2:12*am, Bob Larter wrote:
Franc Zabkar wrote: On Mon, 6 Apr 2009 05:45:54 -0700 (PDT), Fox put finger to keyboard and composed: http://www.panasonic.com/industrial/...pdf/Panasonic_.... [...] It gives a rough idea of the maximum allowable reverse current depending on the application. The examples in that document cite a reverse current of 4nA for a Schottky diode and 6nA for a silicon diode. But ... A 1A 1N4001 diode has a typical reverse current of 50nA at 25degC: http://www.onsemi.com/pub_link/Collateral/1N4001-D.PDF A 1A 1N5817 Schottky diode has a reverse current of 1mA at 25degC: http://www.onsemi.com/pub_link/Collateral/1N5817-D.PDF The above leakages are measured at the rated reverse voltage, so at 2V (5V - 3V) they would probably be a lot less. Nevertheless the figures still suggest that Schottky diodes have worse leakage characteristics than regular silicon diodes. Interesting. I hadn't realised that 1N5817s were as leaky as that. The OP should probably try to find a low reverse-leakage Schottky, or substitute a standard diode & accept that the battery life will be shortened due to the lowered memory voltage. -- * * W * . | ,. w , * "Some people are alive only because * *\|/ *\|/ * * it is illegal to kill them." * *Perna condita delenda est ---^----^--------------------------------------------------------------- I found a compromise. A .7V 0.5 uA IR silicon diode with a 3.6V lithium battery. I had a bunch of both lying around in my parts box. |
#10
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Fox wrote:
On Apr 8, 2:12 am, Bob Larter wrote: [...] Interesting. I hadn't realised that 1N5817s were as leaky as that. The OP should probably try to find a low reverse-leakage Schottky, or substitute a standard diode & accept that the battery life will be shortened due to the lowered memory voltage. I found a compromise. A .7V 0.5 uA IR silicon diode with a 3.6V lithium battery. I had a bunch of both lying around in my parts box. That should work fine. ;^) -- W . | ,. w , "Some people are alive only because \|/ \|/ it is illegal to kill them." Perna condita delenda est ---^----^--------------------------------------------------------------- |
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